马衍东-山东大学物理学院

马衍东

发布日期：2018-01-19

基本信息
姓名	马衍东
职称	教授,博导
Email	yandong.ma@sdu.edu.cn
电话
地址	知新楼C1024
其它主页地址	http://www.researcherid.com/rid/J-9854-2014

学习及工作简历

2017.09-至今山东大学物理学院"齐鲁青年学者“特聘教授
2016.05-2017.08 德国Universität Leipzig 博士后
2014.08-2016.04 德国Jacobs University Bremen 博士后
2009.09-2014.06 山东大学物理学院理学博士学位
2005.09-2009.06 山东大学物理与微电子学院理学学士学位

研究方向

计算材料物理

科研项目

1，2017-2022，“齐鲁青年学者”启动经费100W，主持

代表论文

For bibliographic information, see more in Web SCI:
http://www.researcherid.com/rid/J-9854-2014

1. Ma, Y. D., Kuc, A., Heine. T.* (2017): Single-layer Tl2O: A metal-shrouded 2D semiconductor with high electronic mobility. J. Am. Chem. Soc. 139 (34), 11694–11697.

2. Ma, Y. D., Kuc, A., Jing, Y., Philipsen, P., Heine. T.* (2017): Haeckelite NbS2 two-dimensional crystal - a diamagnetic high mobility semiconductor with Nb4+ ions. Angew. Chem. Int. Ed. 56, 1- 5.

3. Ma, Y. D.*, Dai, Y., Kou, L. Z., Frauenheim, T., Heine. T.* (2015): Robust two-dimensional topological insulators in methyl-functionalized bismuth, antimony and lead bilayer films. Nano Lett. 15, 1083-1089.

4. Ma, Y. D.*, Kou, L. Z., Li, X., Dai, Y., Smith, S. C., Heine. T.* (2015): Quantum spin Hall effect and topological phase transition in two-dimensional square transition metal dichalcogenides. Phys. Rev. B 92, 085427.

5. Ma, Y. D., Dai, Y., Guo, M., Niu, C. W., Zhu, Y. T., Huang, B. B. (2012): Evidence of the existence of magnetism in pristine VX2 monolayers (X = S, Se) and their strain-induced tunable magnetic properties. ACS Nano 6, 1695-1701.

6. Ma, Y. D.*, Kou, L. Z., Dai, Y., Heine. T.* (2016): Proposed two-dimensional topological insulator in SiTe. Phys. Rev. B 94, 201104 (Rapid Communication).

7. Ma, Y. D.*, Kou, L. Z., Dai, Y., Heine. T.* (2016): Two-dimensional topological insulators in group-11 chalcogenide compounds: M2Te (M=Cu, Ag). Phys. Rev. B 93 (23), 235451.

8.Ma, Y. D.*, Kou, L. Z., Li, X., Dai, Y., Heine. T.* (2016): Two-dimensional transition metal dichalcogenides with a hexagonal lattice: Room-temperature quantum spin Hall insulators. Phys. Rev. B 93(3), 035442.

9. Ma, Y. D.*, Li, X., Kou, L. Z., Yan, B. H., Niu, C. W., Dai, Y., Heine. T.* (2015): Two-dimensional inversion asymmetric topological insulators in functionalized III-Bi bilayers. Phys. Rev. B 91, 235306.

10. Ma, Y. D., Dai, Y.*, Huang, B. B. (2013): Dirac cones in two-dimensional lattices: Janugraphene and chlorographene. J. Phys. Chem. Lett. 4, 2471-2476.

11. Ma, Y. D., Dai, Y.*, Yu, L., Niu, C. W., Huang, B. B. (2013): Engineering a topological phase transition in β-InSe via strain. New J. Phys. 15, 073008.

12. Ma, Y. D., Dai, Y,*, Guo, M., Huang, B. B. (2012): Graphene-diamond interface: Gap opening and electronic spin injection. Phys. Rev. B 85, 235448.

13. Ma, Y. D., Dai, Y.*, Zhang, Z. K., Yu, L., Huang, B. B. (2012): Magnetic properties of phthalocyanine-based organometallic nanowire. Appl. Phys. Lett. 101, 062405.

14. Ma, Y. D., Dai, Y.*, Guo, M., Niu, C. W., Huang, B. B. (2011): Graphene adhesion on MoS2 monolayer: An ab initio study. Nanoscale 3, 3883-3887.

15. Ma, Y. D., Dai, Y.*, Guo, M., Niu, C. W., Yu, L., Huang, B. B. (2011): Strain-induced magnetic transitions in half-fluorinated single layers of BN, GaN and graphene. Nanoscale 3, 2301-2306.

2017年论文

12. Ma, Y. D., Kuc, A., Heine. T.* (2017): Single-layer Tl2O: A metal-shrouded 2D semiconductor with high electronic mobility. J. Am. Chem. Soc. 139 (34), 11694–11697.
11. Jing, Y., Ma, Y. D., Wang, Y., Li, Y. F.*, Heine, T. * (2017): Ultrathin layers of PdPX (X= S, Se): Two dimensional semiconductors for photocatalytic water splitting. Chem. Eur. J. 23, 1-6.
10. Kou, L. Z. *, Du, A. J.; Ma, Y. D., Liao, T., Chen, .C. F. (2017): Charging assisted structural phase transitions in monolayer InSe. Phys. Chem. Chem. Phys. 19, 22502-22508.
9. Ma, Y. D., Kuc, A., Jing, Y., Philipsen, P., Heine. T.* (2017): Haeckelite NbS2 two-dimensional crystal - a diamagnetic high mobility semiconductor with Nb4+ ions. Angew. Chem. Int. Ed. 56, 1-5.
8. Sun, Q. L., Dai, Y.*, Yin, N., Yu, L., Ma, Y. D., Wei, W., Huang, B. B. (2017): Two-dimensional square transition metal dichalcogenides with lateral heterostructures Nano Resear. DOI https://doi.org/10.1007/s12274-017-1605-4.
7. Zhang, S. L., Zhou, W. H., Ma, Y. D., Ji, J. P., Cai, B., Yang, S. A., Zhu, Z., Chen, Z. F., Zeng, H. B.* (2017): Antimonene oxides: Emerging tunable direct bandgap semiconductor and novel topological insulator. Nano Lett. 17 (6), 3434–3440.
6. Li, X. R., Dai, Y.*, Ma, Y. D., Li, M. M., Yu, L., Huang, B. B. (2017): Landscape of DNA-like inorganic metal-free double helical semiconductors and potential applications in photocatalytic water splitting. J. Mater. Chem. A 5(18), 8484-8492.
5. Ma, Y. D., Jing, Y., Heine. T.* (2017): Double Dirac point semimetal in two-dimensional material: Ta2Se3. 2D Materi. 4, 025111.
4. Li, X. R., Dai, Y.*, Niu, C. W., Ma, Y. D., Wei, W., Huang, B. B. (2017): MoTe2 as a good match for GeI, preserving nontrivial quantum spin Hall phases. Nano Resear. 10 (8), 2823-2832.
3. Kou, L. Z. *, Ma, Y. D., Sun, Z. Q., Heine, T., Chen, .C. F. (2017): Two dimensional topological insulators: Progress and prospects. J. Phys. Chem. Lett. 8(8), 1905-1919 (Review).
2. Jing, Y., Ma, Y. D., Li, Y. F.*, Heine, T. * (2017): GeP3: A small indirect band gap 2D crystal with high carrier mobility and strong interlayer quantum confinement. Nano Lett. 17, 1833–1838.
1. Sun, Q. L., Dai, Y.*, Niu, C W., Ma, Y. D., Yu, L., Wei, W., Huang, B. B. (2017): Lateral topological crystalline insulator heterostructure. 2D Materi. 4, 025038.

2016年论文

13. Kou, L. Z.*, Ma, Y. D., Tang, C., Sun, Z. Q., Du, A. J., Chen, C. F., (2016): Auxetic and ferroelastic borophane: A novel 2D material with negative possion’s ratio and switchable Dirac transport channels. Nano Lett. 16, 7910–7914
12. Ma, Y. D.*, Kou, L. Z., Dai, Y., Heine. T.* (2016): Proposed two-dimensional topological insulator in SiTe. Phys. Rev. B 94, 201104 (Rapid Communication).
11. Kou, L. Z.*, Ma, Y. D., Zhou, L. J., Sun, Z. Q., Gu, Y. T., Du, A. J., Smith, S. C. ., Chen, C. F., (2016): High-mobility anisotropic transport in few-layer γ-B28 films. Nanoscale 8, 20111-20117.
10. Liu, Q. Q., Dai, Y.*, Li, X. R., Ma, Y. D., Ma, X. C., Huang, B. B. (2016): Giant spin–orbit coupling topological insulator h-Ga2Bi2 with exotic O-bridge states. Nanoscale 8, 19066-19074.
9. Ma, Y. D.*, Kou, L. Z., Dai, Y., Heine. T.* (2016): Two-dimensional topological insulators in group-11 chalcogenide compounds: M2Te (M=Cu, Ag). Phys. Rev. B 93 (23), 235451.
8. Sun, Q. L., Dai, Y.*, Ma, Y. D., Yin, N., Wei, W., Yu, L., Huang, B. B. (2016): Design of lateral heterostructure from arsenene and antimonene. 2D Materi. 3, 3.
7. Li, X. R., Dai, Y.*, Ma, Y. D., Sun, Q. L., Wei, W., Huang, B. B. (2016): Exotic quantum spin Hall effect and anisotropic spin splitting in carbon based TMC6 (TM = Mo, W) Kagome Monolayers. Carbon 109, 788-794.
6. Zhang, S. L., Xie, M. Q., Cai, B., Zhang, H. J., Ma, Y. D., Chen, Z. F., Zhu, Z., Hu, Z. Y., Zeng, H. B.* (2016): Semiconductor-topological insulator transition of two-dimensional SbAs induced by biaxial tensile strain. Phys. Rev. B 93, 245303.
5. Ma, Y. D.*, Kou, L. Z., Li, X., Dai, Y., Heine. T.* (2016): Room temperature quantum spin Hall states in two-dimensional crystals composed of pentagonal rings and their quantum wells. NPG Asia Mater. 8, e264.
4. Sun, Q. L., Dai, Y.*, Ma, Y. D., Jing, T., Wei, W., Huang, B. B. (2016): Ab initio prediction and characterization of Mo2C monolayer as anodes for lithium-ion and sodium-ion batteries. J. Phys. Chem. Lett. 7, 937-943.
3. Ma, Y. D.*, Kou, L. Z., Li, X., Dai, Y., Heine. T.* (2016): Two-dimensional transition metal dichalcogenides with a hexagonal lattice: Room-temperature quantum spin Hall insulators. Phys. Rev. B 93(3), 035442.
2. Juarez-Mosqueda, R.*, Ma, Y. D.*, Thomas, H.* (2016): Prediction of topological phase transition in X2–SiGe monolayers. Phys. Chem. Chem. Phys. 18, 3669-3674.
1. Liu, Q. Q., Dai, Y.*, Ma, Y. D., Li, X. R., Li, T. J., Niu, C. W.; Huang, B. B. (2016): Large gap quantum spin Hall insulators of nested hexagonal III-Bi monolayer. Sci. Rep. 6, 34861.

2015年论文

17. Kou, L. Z.*, Tan, X., Ma, Y. D., Tahini, H., Zhou, L. J., Sun, Z. Q., Du, A. J., Chen, C. F., Smith, S. C. (2015): Tetragonal bismuth bilayer: A stable and robust quantum spin hall insulator. 2D Mater. 2(4), 045010.
16. Zhang, H. J., Ma, Y. D., Chen, Z. F.* (2015): Quantum spin Hall insulators in strain-modified arsenene. Nanoscale 7(45), 19152-19159.
15. Ma, Y. D.*, Kou, L. Z., Li, X., Dai, Y., Smith, S. C., Heine. T.* (2015): Quantum spin Hall effect and topological phase transition in two-dimensional square transition metal dichalcogenides. Phys. Rev. B 92, 085427.
14. Sun, Q. L., Dai, Y.*, Ma, Y. D., Wei, W., Yu, L., Huang, B. B. (2015): Ideal spintronics in molecule-based novel organometallic nanowires. Sci. Rep. 5, 12772.
13. Kou, L. Z.*, Ma, Y. D., Yan B. H., Tan, X., Chen, C., Smith, S. C. (2015): Encapsulated silicene: A robust large-gap topological insulator. ACS Appl. Mater. Interfaces 7(34), 19226-19233.
12. Ma, Y. D.*, Kou, L. Z., Du, A. J., Heine. T.* (2015): Group 14 element based noncentrosymmetric quantum spin Hall insulators with large bulk gap. Nano Research 8, 3412-3420.
11. Sun, Q. L., Dai, Y.*, Ma, Y. D., Wei, W., Huang, B. B. (2015): Vertical and bidirectional heterostructures from graphyne and MSe2 (M= Mo, W). J. Phys. Chem. Lett. 6, 2694–2701.
10. Ma, Y. D.*, Li, X., Kou, L. Z., Yan, B. H., Niu, C. W., Dai, Y., Heine. T.* (2015): Two-dimensional inversion asymmetric topological insulators in functionalized III-Bi bilayers. Phys. Rev. B 91, 235306.
9. Wei, W., Dai, Y.*, Niu, C. W., Li. X., Ma, Y. D., Huang, B. B. (2015): Electronic properties of two-dimensional van der Waals GaS/GaSe heterostructures. J. Mater. Chem. C 3(43), 11548-11554
8. Sun, Q. L., Dai, Y.*, Ma, Y. D., Li, X. R., Wei, W., Huang, B. B. (2015): Two-dimensional metalloporphyrin monolayers with intriguing electronic and spintronic properties. J. Mater. Chem. C 3, 6901-6907.
7. Li, X. R., Dai, Y.*, Ma, Y. D., Liu, Q. Q., Huang, B. B. (2015): Prediction of large-gap quantum spin Hall insulator and rashba-dresselhaus effect in two-dimensional g-TlA (A= N, P, As, and Sb) monolayer films. Nano Research 8, 2954-2962.
6. Kou, L. Z.*, Ma, Y. D., Smith, S. C., Chen, C. F. (2015): Anisotropic ripple deformation in phosphorene. J. Phys. Chem. Lett. 6, 1509–1513.
5. Ma, Y. D.*, Dai, Y., Kou, L. Z., Frauenheim, T., Heine. T.* (2015): Robust two-dimensional topological insulators in methyl-functionalized bismuth, antimony and lead bilayer films. Nano Lett. 15, 1083-1089.
4. Li, X. R., Dai, Y.*, Ma, Y. D., Liu, Q. Q., Huang, B. B. (2015): Intriguing electronic properties of two-dimensional MoS2/TM2CO2 (TM= Ti, Zr, or Hf) hetero-bilayers: type-II semiconductors with tunable band gaps. Nanotechnology 26, 135703.
3. Sun, Q. L., Dai, Y.*, Ma, Y. D., Wei, W., Huang, B. B. (2015): Lateral heterojunctions within monolayer h-BN/graphene: A first-principles study. RSC Adv. 5, 33037-33043
2. Kou, L. Z.*, Ma, Y. D., Tan, X., Frauenheim, T., Du, A. J., Smith, S. C., (2015): Structural and electronic properties of layered arsenic and antimony arsenide. J. Phys. Chem. C 119, 6918–6922.
1. Jin, H., Dai, Y.*, Ma, Y. D., Li, X. R., Wei, W., Yu, L., Huang, B. B. (2015): The electronic and magnetic properties of transition-metal element doped three-dimensional topological Dirac semimetal in Cd3As2. J. Mater. Chem. C 3, 3547-3551.

2014年及之前论文

40. Ma, Y. D., Dai, Y.*, Wei, W., Huang, B. B., Whangbo, M. H. (2014): Strain-induced quantum spin Hall effect in methyl-substituted germanane GeCH3. Sci. Rep. 4, 7297.
39. Ma, Y. D., Dai, Y.*, Yin, N., Jin, T., Huang, B. B. (2014): Ideal two-dimensional systems with a gain Rashba-type spin splitting SrFBiS2 and BiOBiS2 nanosheets. J. Mater. Chem. C 2, 8539-8545.
38. Ma, Y. D., Dai, Y.*, Li, X. R., Sun, Q. L., Huang, B. B. (2014): Prediction of two-dimensional materials with half-metallic Dirac cones: Ni2C18H12 and Co2C18H12. Carbon 73, 382-388.
37. Li, X. R., Dai, Y.*, Ma, Y. D., Huang, B. B. (2014): Electronic and magnetic properties of honeycomb transition metal monolayers: First-principles insights. Phys. Chem. Chem. Phys. 16, 13383-13389.
36. Li, X. R., Dai, Y.*, Ma, Y. D., Han S. H., Huang, B. B. (2014): Graphene/g-C3N4 bilayer: Considerable band gap opening and effective band structure engineering. Phys. Chem. Chem. Phys. 16, 4230-4235.
35. Ma, Y. D., Dai, Y.*, Huang, B. B. (2014): Realization of controlling the band alignment via atomic substitution. Carbon 69, 495-501.
34. Ma, Y. D., Dai, Y.*, Wei, W., Li, X. R., Huang, B. B. (2014): Emergence of electric polarity in BiTeX (X=Br and I) monolayers and the giant Rashba spin splitting. Phys. Chem. Chem. Phys. 16, 17603-17609.
33. Ma, Y. D., Dai, Y.*, Lu, Y. B., Huang, B. B. (2014): Effective bandgap engineering in wrinkled germanane via tiny electric field. J. Mater. Chem. C 2, 1125-1130.
32. Ma, Y. D., Dai, Y.*, Huang, B. B. (2013): Dirac cones in two-dimensional lattices: Janugraphene and chlorographene. J. Phys. Chem. Lett. 4, 2471-2476.
31. Niu, C. W., Dai, Y.*, Guo, M., Ma, Y. D., Huang, B. B., Whangbo, M.-H. (2013): Tunable topological surface and realization of insulating massive Dirac fermion state in Bi2Te2Se with co-substitution. J. Mater. Chem. C 1, 114-120.
30. Ma, Y. D., Dai, Y.*, Yu, L., Niu, C. W., Huang, B. B. (2013): Engineering a topological phase transition in β-InSe via strain. New J. Phys. 15, 073008.
29. Ma, Y. D., Dai, Y.*, Wei, W., Yu, L., Huang, B. B. (2013): Novel two-dimensional tetragonal monolayer: Metal-TCNQ networks. J. Phys. Chem. A 117, 5171-5177.
28. Ma, Y. D., Dai, Y.*, Wei, W., Huang, B. B. (2013): Engineering intriguing electronic and magnetic properties in novel one-dimensional staircase-like metallocene wires. J. Mater. Chem. C 1, 941-946.
27. Ma, Y. D., Dai, Y.*, Guo, M., Yu, L., Huang, B. B. (2013): Tunable electronic and dielectric behavior of GaS and GaSe monolayers. Phys. Chem. Chem. Phys. 15, 7098-7105.
26. Ma, Y. D., Dai, Y.*, Li, X. R., Li, Z. J., Huang, B. B. (2013): First-principles study of one-dimensional sandwich wires [(P)5TM]∞ (TM=Ti, V, Cr, Mn, Fe, Co). J. Phys.: Condens. Matter. 25, 395503.
25. Niu, C. W., Dai, Y.*, Ma, Y. D., Huang, B. B. (2013): Material realization of topological crystalline insulators: Role of strain and spin-orbit coupling. Mater. Express 3, 159-165.
24. Sun, Q. L., Dai, Y.*, Ma, Y. D., Ma, X. C., Huang, B. B. (2013): Electronic and molecular behaviors of a novel ionic paramagnetic ruthenium (III) complex. Phys. Chem. Chem. Phys. 15, 15392-15398.
23. Li, X. R., Ma, Y. D., Dai, Y.*, Huang, B. B. (2013): Electronic and magnetic properties of one dimensional sandwich polymers: [(Ge5)TM]∞ (TM= Ti, V, Cr, Mn, Fe). J. Mater. Chem. C 1, 4565-4569.
22. Ma, Y. D., Dai, Y.*, Guo, M., Niu, C. W., Zhu, Y. T., Huang, B. B. (2012): Evidence of the existence of magnetism in pristine VX2 monolayers (X = S, Se) and their strain-induced tunable magnetic properties. ACS Nano 6, 1695-1701.
21. Ma, Y. D., Dai, Y.*, Niu, C. W., Huang, B. B. (2012): Halogenated two-dimensional germanium: Candidate materials for being of quantum spin Hall state. J. Mater. Chem. 22, 12587-12591.
20. Niu, C. W., Dai, Y.*, Zhu, Y. T., Ma, Y. D., Yu, L., Han, S. H., Huang, B. B. (2012): Realization of tunable Dirac cone and insulating bulk states in topological insulators (Bi1-xSbx)2Te3. Sci. Rep. 2, 976.
19. Wang, J. P., Wang, Z. Y., Huang, B. B.*, Ma, Y. D., Liu, Y. Y., Qin, X. Y., Zhang, X. Y., Dai, Y. (2012): Oxygen vacancy induced band-gap narrowing and enhanced visible light photocatalytic activity of ZnO. ACS Appl. Mater. Interfaces 4, 4024-4030.
18. Ma, Y. D., Dai, Y,*, Guo, M., Huang, B. B. (2012): Graphene-diamond interface: Gap opening and electronic spin injection. Phys. Rev. B 85, 235448.
17. Ma, Y. D., Dai, Y.*, Zhang, Z. K., Yu, L., Huang, B. B. (2012): Magnetic properties of phthalocyanine-based organometallic nanowire. Appl. Phys. Lett. 101, 062405.
16. Ma, Y. D., Dai, Y.*, Guo, M., Niu, C. W., Huang, B. B. (2012): Intriguing behavior of halogenated two-dimensional tin. J. Phys. Chem. C 116, 12977-12981.
15. Wei, W., Dai, Y.*, Guo, M., Ma, Y. D., Huang, B. B. (2012): Atomic Pt and molecular H2O adsorptions on SrTiO3 with and without Nb-doping: Electron trapping center and mediating roles of Pt in charge transfer from semiconductor to water. J. Solid State Chem. 187, 64-69.
14. Lu, J. B., Dai, Y.*, Guo, M., Wei, W., Ma, Y. D., Han, S. H., Huang, B. B. (2012): Structure and electronic properties and phase stabilities of the Cd(1-x)Zn(x)S solid solution in the range of 0≤x≤1. ChemPhysChem 13, 147-154.
13. Ma, Y. D., Dai, Y.*, Guo, M., Niu, C. W., Zhu, Y. T., Huang, B. B. (2012): Electronic and magnetic properties of the two-dimensional C4H-type polymer with strain effects, intrinsic defects and foreign atom substitutions. Phys. Chem. Chem. Phys. 14, 3651-3658.
12. Niu, C. W., Dai, Y.*, Zhu, Y. T., Lu, J. B., Ma, Y. D., Huang, B. B. (2012): Topological phase transition and unexpected mass acquisition of Dirac fermion in TlBi(S1-xSex)2. Appl. Phys. Lett. 101, 182101.
11. Niu, C. W., Dai, Y.*, Zhang, Z. K., Ma, Y. D., Huang, B. B. (2012): Ferromagnetism and manipulation of topological surface states in Bi2Se3 family by 2p light elements. Appl. Phys. Lett. 100, 252410.
10. Ma, Y. D., Dai, Y.*, Guo, M., Niu, C. W., Huang, B. B. (2011): Graphene adhesion on MoS2 monolayer: An ab initio study. Nanoscale 3, 3883-3887.
9. Ma, Y. D., Dai, Y.*, Guo, M., Niu, C. W., Yu, L., Huang, B. B. (2011): Strain-induced magnetic transitions in half-fluorinated single layers of BN, GaN and graphene. Nanoscale 3, 2301-2306.
8. Ma, Y. D., Dai, Y.*, Wei, W., Niu, C. W., Yu, L., Huang, B. B. (2011): First-principles study of the Graphene@MoSe2 heterobilayers. J. Phys. Chem. C 115, 20237-20241.
7. Ma, Y. D., Dai, Y.*, Guo, M., Niu, C. W., Yu, L., Huang, B. B. (2011): Magnetic properties of the semifluorinated and semihydrogenated 2D sheets of group-IV and III-V binary compounds. Appl. Surf. Sci. 257, 7845-7850.
6. Ma, Y. D., Dai, Y.*, Huang, B. B. (2011): Magnetism in non-transition-metal doped CdS studied by density functional theory. Comp. Mater. Sci. 50, 1661-1666.
5. Niu, C. W., Dai, Y.*, Yu, L., Guo, M., Ma, Y. D., Huang, B. B. (2011): Quantum anomalous Hall effect in doped ternary chalcogenide topological insulators TlBiTe2 and TlBiSe2. Appl. Phys. Lett. 99, 142502.
4. Ma, Y. D., Dai, Y.*, Guo, M., Niu, C. W., Lu, J. B., Huang, B. B. (2011): Electronic and magnetic properties of perfect, vacancy-doped, and nonmetal adsorbed MoSe2, MoTe2 and WS2 monolayers. Phys. Chem. Chem. Phys. 13, 15546-15553.
3. Ma, Y. D., Dai, Y.*, Wei, W., Liu, X. H., Yu, L., Huang, B. B. (2011): Ag adsorption on Cd-terminated CdS (0001) and S-terminated CdS (000-1) surfaces: First-principles investigations. J. Solid State Chem. 184, 747-752.
2. Niu, C. W., Dai, Y.*, Guo, M., Ma, Y. D., Huang, B. B. (2011): Mn induced ferromagnetism and modulated topological surface states in Bi2Te3. Appl. Phys. Lett. 98, 25250.
1. Ma, Y. D., Dai, Y.*, Jin, H., Huang, B. B. (2010): Study of ammonia molecule adsorbing on diamond (100) surface. Appl. Surf. Sci. 256, 4136-4141.